Hybrid integrated thin-film lithium niobate and a silicon carbide microcomb amplifier.

We demonstrate a hybrid integrated optical frequency comb amplifier composed of a silicon carbide microcomb and a lithium niobate waveguide amplifier, which generates a 10-dB on-chip gain for the C+L band microcombs under 1480-nm laser pumping and an 8-dB gain under 980-nm laser pumping. It will solve the problem of low output power of microcombs and can be applied in various scenarios such as optical communication, lidar, optical computing, astronomical detection, atomic clocks, and more.

Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform.

Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation.

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics.

The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 10 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances.

Visible and near-infrared microdisk resonators on a 4H-silicon-carbide-on-insulator platform.

Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-on-insulator (4H-SiCOI) platform. By carrying out micro-photoluminescence measurements at room temperature, we show that the microdisk resonators support whispering-gallery modes (WGMs) with quality factors up to 5.25×10 and mode volumes down to 2.

Engineering of self-rectifying filamentary resistive switching in LiNbO single crystalline thin film via strain doping.

The abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO (LNO) single crystalline thin films are fabricated on Pt/SiO/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements.

4H-SiC microring resonators for nonlinear integrated photonics.

We demonstrate enhanced four-wave mixing (FWM) in high-quality factor, high-confinement 4H-SiC microring resonators via continuous-wave FWM. With the large power buildup effect of the microring resonator, -21.7  dBFWM conversion efficiency is achieved with 79 mW pump power.

High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator.

Silicon carbide (SiC) exhibits promising material properties for nonlinear integrated optics. We report on a SiC-on-insulator platform based on crystalline 4H-SiC and demonstrate high-confinement SiC microring resonators with sub-micron waveguide cross-sectional dimensions. The Q factor of SiC microring resonators in such a sub-micron waveguide dimension is improved by a factor of six after surface roughness reduction by applying a wet oxidation process.