The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of SbTe.

As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. SbTe, one of the candidate materials for high-speed PCRAM, has high crystallization speed and poor thermal stability. In this work, we investigated the effect of carbon doping on SbTe.

Different photocurrent response of CsPbBr particles.

Zero-dimensional (0D) all-inorganic cesium lead halide perovskites, particularly CsPbBr, have been attracting wide attention due to their excellent optical properties and stability. The research also focuses on the origin of green emission from CsPbBr, which has a bandgap located in the ultraviolet B (UVB) region. So far, both CsPbBr without visible emission and with green emission have been successfully prepared; however, the origin of green emission remains controversial.

Universal, In Situ Transformation of Bulky Compounds into Nanoscale Catalysts by High-Temperature Pulse.

The synthesis of nanoscale metal compound catalysts has attracted much research attention in the past decade. The challenges of preparation of the metal compound include the complexity of the synthesis process and difficulty of precise control of the reaction conditions. Herein, we report an in situ synthesis of nanoparticles via a high-temperature pulse method where the bulk material acts as the precursor.

Orbital electronic occupation effect on metal-insulator transition in Ti V O.

A series of Ti V O (0%  ⩽  x  ⩽  4.48%) thin films on c-plane sapphire substrates have been fabricated by co-sputtering oxidation solutions, and the metal-insulator transition temperature (T ) of Ti V O films rises monotonically at the rate of 1.64 K/at.

Electrochemical Intercalation of Lithium Ions into NbSe2 Nanosheets.

Transition metal dichalcogenides (TMDCs) have been known for decades to have unique properties and recently attracted broad attention for their two-dimensional (2D) characteristics. NbSe2 is a metallic TMDC that has been studied for its charge density wave transition behavior and superconductivity but is still largely unexplored for its potential use in engineered devices with applications in areas such as electronics, optics, and batteries. Thus, we successfully demonstrate and present evidence of lithium intercalation in NbSe2 as a technique capable of modifying the material properties of NbSe2 for further study.

The Structural and Electronic Properties of CdS/ZnS Core-Shell Nanowires.

The structural and electronic properties of the CdS/ZnS core-shell nanowires (NWs) oriented along [001] direction have been investigated by means of the first-principles calculation. It is found that CdS core suffers from the compressive strain in the CdS-core/ZnS-shell NWs, and ZnS core is stretched in the ZnS-core/CdS-shell NWs. A thicker ZnS shell can improve the NWs' stability, and a thicker CdS shell would decrease their stability.

Molten Au/Ge alloy migration in Ge nanowires.

Herein, we report time-resolved in situ transmission electron microscopy observation of Au particle melting at a Ge nanowire tip, subsequent forming of Au/Ge alloy liquid, and its migrating within the Ge nanowire. The migration direction and position of the Au/Ge liquid can be controlled by the applied voltage and the migration speed shows a linear deceleration in the nanowire. In a migration model proposed, the relevant dynamic mechanisms (electromigration, thermodiffusion, and viscous force, etc.

Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures.

The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs) with a diameter of 1.1-2.8 nm are calculated by means of the first principle calculation.

In situ atom scale visualization of domain wall dynamics in VO2 insulator-metal phase transition.

A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To fully understand and harness this motion, it requires visualization of domain wall dynamics in real space.

Melting of metallic electrodes and their flowing through a carbon nanotube channel within a device.

Evidence is presented of a new cause of Joule heating within a simple electronic device involving a multiwalled carbon nanotube (CNT) mounted on two metal electrodes forming an electrical circuit. This time-resolved, high-resolution in situ observation of metal electrode material melting and its flow driven by the thermomigration and electromigration forces through the CNT channel sheds an additional light on the effects affecting the real electrical performance of the CNT-based devices.