Publications by authors named "Ai Dong Li"

Zinc-ion batteries (ZIBs) have consistently faced challenges related to the instability of the zinc anode. Uncontrolled dendrite growth, hydrogen evolution reaction (HER), and byproduct accumulation on the zinc anode severely affect the cycling life of ZIBs. Herein, inorganic-organic hybrid thin films of titanicones (Ti-based hydroquinone, TiHQ) were fabricated by molecular layer deposition (MLD) technology to modify the zinc metal anode.

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Background: Data from the World Health Organization's International Agency for Research on Cancer reported that China had the highest prevalence of cancer and cancer deaths in 2022. Liver and pancreatic cancers accounted for the highest number of new cases. Real-world data (RWD) is now widely preferred to traditional clinical trials in various fields of medicine and healthcare, as the traditional research approach often involves highly selected populations and interventions and controls that are strictly regulated.

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Background: Breast cancer is one of the most common malignant tumors in women worldwide and poses a severe threat to their health. Therefore, this study examined patients who underwent breast cancer surgery, analyzed hospitalization costs and structure, and explored the impact of China Healthcare Security Diagnosis Related Groups (CHS-DRG) management on patient costs. It aimed to provide medical institutions with ways to reduce costs, optimize cost structures, reduce patient burden, and improve service efficiency.

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An organic-inorganic hybrid resistive random-access memory based on a nanoporous zinc-based hydroquinone (Zn-HQ) thin film has been constructed with a Pt/Zn-HQ/Ag sandwich structure. The porous Zn-HQ functional layer was directly fabricated by a one-step molecular layer deposition. These Pt/Zn-HQ/Ag devices show a typical electroforming-free bipolar resistive switching characteristic with lower operation voltages and higher on/off ratio above 10.

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The conformal coating or surface modification in high aspect ratio nanostructures is a tough challenge using traditional physical/chemical vapor deposition, especially for metal deposition. In this work, the growth behavior of iridium (Ir) metal formed by atomic layer deposition (ALD) in anodic aluminum oxide (AAO) templates was explored deeply. It is found that the surface hydrophilicity is crucial for the nucleation of ALD Ir.

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Nonuniform Li deposition causes dendrites and low Coulombic efficiency (CE), seriously hindering the practical applications of Li metal. Herein, we developed an artificial solid-state interphase (SEI) with planar polycyclic aromatic hydrocarbons (PAHs) on the surface of Li metal anodes by a facile in situ formation technology. The resultant dihydroxyviolanthron (DHV) layers serve as the protective layer to stabilize the SEI.

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Silicon is considered as a blooming candidate material for next-generation lithium-ion batteries due to its low electrochemical potential and high theoretical capacity. However, its commercialization has been impeded by the poor cycling issue associated with severe volume changes (∼380%) upon (de)lithiation. Herein, an organic-inorganic hybrid film of titanicone via molecular layer deposition (MLD) is proposed as an artificial solid electrolyte interphase (SEI) layer for Si anodes.

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Lithium-ion batteries with conversion-type anode electrodes have attracted increasing interest in providing higher energy storage density than those with commercial intercalation-type electrodes. However, conversion-type materials exhibit severe structural instability and capacity fade during cycling. In this work, a molecular layer deposition (MLD)-derived conductive AlO/carbon layer was employed to stabilize the structure of the cactus-like NiCoO nanocrystal (NC) anode.

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In this work, commercial anatase TiO powders were modified using ultrathin FeO layer by atomic layer deposition (ALD). The ultrathin FeO coating having small bandgap of 2.20 eV can increase the visible light absorption of TiO supports, at the meantime, FeO/TiO heterojunction can effectively improve the lifetime of photogenerated electron-hole pairs.

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To address the issues of large volume expansion and low electrical conductivity of ZnO anode nanomaterials during lithium ion battery operation, herein we engineered a rod-like ZnO anode with robust and conductive TiO2 quantum dot (QD)@carbon coating derived from molecular layer deposited titanicone, in which the TiO2 QDs are well confined inside the carbon layer. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) confirm the formation of TiO2 QDs and carbonization of fumaric acid in hybrid films after annealing in H2 atmosphere at 700 °C. Benefiting from a unique protective layer design, the prepared TiO2 QD@carbon@ZnO nanorod (NR) anodes display outstanding cycling performance with a discharge capacity of 1154 mA h g-1 after 100 cycles and 70% capacity retention, along with a high rate capacity of 470 mA h g-1 for 500 cycles at 2 A g-1.

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Co-Pt bimetallic nanoparticles with adjustable composition and particle size were prepared by the combination of atomic layer deposition and H post-deposition annealing. The structure, magnetic and electrocatalytic properties of Co-Pt bimetallic nanoparticles can be facilely tuned by controlling the composition.

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In this work, we designed ZnO/TiO nanolaminates by atomic layer deposition (ALD) as anode material for lithium ion batteries. ZnO/TiO nanolaminates were fabricated on copper foil by depositing unit of 26 cycles ZnO/26 cycles TiO repeatedly using ALD. ZnO/TiO nanolaminates are much more stable than pristine ZnO films during electrochemical cycling process.

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The wide applications of ultrathin group IV metal oxide films (TiO, ZrO and HfO) probably expose materials to potentially reactive etchants and solvents, appealing for extraordinary chemical stability and corrosion resistance property. In this paper, TiO ultrathin films were deposited on Si at 200 °C while ZrO and HfO were grown at 250 °C to fit their growth temperature window, by thermal atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). A variety of chemical liquid media including 1 mol/L HSO, 1 mol/L HCl, 1 mol/L KOH, 1 mol/L KCl, and 18 MΩ deionized water were used to test and compare chemical stability of all these as-deposited group IV metal oxides thin films, as well as post-annealed samples at various temperatures.

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Ti-based maleic acid (MA) hybrid films were successfully fabricated by molecular layer deposition (MLD) using organic precursor MA and inorganic precursor TiCl. The effect of deposition temperature on the growth rate, composition, and bonding mode of hybrid thin films has been investigated systematically. With increasing temperature from 140 to 280 °C, the growth rate decreases from 1.

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In this work, TiN film deposited by plasma enhanced atomic layer deposition (PEALD) is adopted to modify the commercial anatase TiO powders. A series of analyses indicate that the surface modification of 20, 50 and 100 cycles of TiN by PEALD does not change the morphology, crystal size, lattice parameters, and surface area of TiO nano powders, but forms an ultrathin amorphous layer of nitrogen doped TiO (TiON) on the powder surfaces. This ultrathin TiON can facilitate the absorption of TiO in visible light spectrum.

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ZnO nano-clips with better monodispersion were prepared successfully using zinc acetate hydrate (Zn(OAc)·nHO) as Zn source and ethylene glycol (EG) as solvent by a simple solution-based route-polyol process. The effect of solution concentration on the formation of ZnO nano-clips has been investigated deeply. We first prove that the 0.

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N-doped ZnO/g-CN composites have been successfully prepared via a facile and cost-effective sol-gel method. The nanocomposites were systematically characterized by XRD, FE-SEM, HRTEM, FT-IR, XPS, and UV-vis DRS. The results indicated that compared with the pure N-doped ZnO, the absorption edge of binary N-doped ZnO/g-CN shifted to a lower energy with increasing the visible-light absorption and improving the charge separation efficiency, which would enhance its photocatalytic activity.

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CoO-coated commercial TiO powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated systematically. Although the deposition of CoO does not change the anatase structure and crystallite size of P25 powders, the ultraviolet photocatalytic activity has been improved evidently.

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A simple high-throughput approach is presented in this work to fabricate the Au nanoparticles (NPs)/nanogap/Au NPs structure for surface enhanced Raman scattering (SERS). This plasmonic nanostructure can be prepared feasibly by the combination of rapid thermal annealing (RTA), atomic layer deposition (ALD) and chemical etching process. The nanogap size between Au NPs can be easily and precisely tuned to nanometer scale by adjusting the thickness of sacrificial ALD AlO layer.

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The HfO/TiO/HfO trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO/TiO/HfO/Pt and Pt/HfO/TiO/HfO/TiN exhibit typical bipolar resistive switching behavior.

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In situ-formed SiO was introduced into HfO gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO/SiO high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO deposition process.

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AlO- or HfO-based nanocomposite structures with embedded CoPt nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt NCs, ALD-derived Pt/oxide/100 cycle-CoPt NCs/TiN/SiO/Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10) of OFF/ON states, better switching endurance up to 10 cycles, and longer data retention over 10 s.

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In this work, a kind of new memristor with the simple structure of Pt/HfO/ZnO/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfO/ZnO/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling.

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In situ external magnetic field was applied during the synthesis of FePt nanoparticles via a chemical solution method. FePt nanoparticle films were prepared on Si by a drop-coating method with and without a magnetic field. Annealing at 700 °C in reductive atmosphere was explored to obtain ferromagnetic FePt L10 phase.

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