Direct liquid injection pulsed-pressure MOCVD of large area MoS on Si/SiO.

Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS) on Si/SiO substrates by direct liquid injection pulsed-pressure metal-organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained.

Determining by Raman spectroscopy the average thickness and -layer-specific surface coverages of MoS thin films with domains much smaller than the laser spot size.

Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thickness of MoS thin films synthesized by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD). Such samples are constituted of nanoflakes (with a lateral size of typically 50 nm, i.

Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure.

Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600 °C.

Direct measurement of the absolute absorption spectrum of individual semiconducting single-wall carbon nanotubes.

The optical properties of single-wall carbon nanotubes are very promising for developing novel opto-electronic components and sensors with applications in many fields. Despite numerous studies performed using photoluminescence or Raman and Rayleigh scattering, knowledge of their optical response is still partial. Here we determine using spatial modulation spectroscopy, over a broad optical spectral range, the spectrum and amplitude of the absorption cross-section of individual semiconducting single-wall carbon nanotubes.