A Hierarchical 3D TiO /Ni Nanostructure as an Efficient Hole-Extraction and Protection Layer for GaAs Photoanodes.

Photoelectrochemical (PEC) water splitting is a promising clean route to hydrogen fuel. The best-performing materials (III/V semiconductors) require surface passivation, as they are liable to corrosion, and a surface co-catalyst to facilitate water splitting. At present, optimal design combining photoelectrodes with oxygen evolution catalysts remains a significant materials challenge.

Atomic-Level Microstructure of Efficient Formamidinium-Based Perovskite Solar Cells Stabilized by 5-Ammonium Valeric Acid Iodide Revealed by Multinuclear and Two-Dimensional Solid-State NMR.

Chemical doping of inorganic-organic hybrid perovskites is an effective way of improving the performance and operational stability of perovskite solar cells (PSCs). Here we use 5-ammonium valeric acid iodide (AVAI) to chemically stabilize the structure of α-FAPbI. Using solid-state MAS NMR, we demonstrate the atomic-level interaction between the molecular modulator and the perovskite lattice and propose a structural model of the stabilized three-dimensional structure, further aided by density functional theory (DFT) calculations.

Perovskite Solar Cells Yielding Reproducible Photovoltage of 1.20 V.

High photovoltages and power conversion efficiencies of perovskite solar cells (PSCs) can be realized by controlling the undesired nonradiative charge carrier recombination. Here, we introduce a judicious amount of guanidinium iodide into mixed-cation and mixed-halide perovskite films to suppress the parasitic charge carrier recombination, which enabled the fabrication of >20% efficient and operationally stable PSCs yielding reproducible photovoltage as high as 1.20 V.

Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC.

Discovering ways to increase the LED light extraction efficiency (LEE) should help create the largest performance improvement in the power of UV AlGaN LEDs. Employing surface roughening to increase the LEE of typical AlGaN UV LEDs is challenging and not well understood, yet it can be achieved easily in AlGaN LEDs grown on SiC. We fabricate thin-film UV LEDs (~294-310 nm) grown on SiC-with reflective contacts and roughened emission surface-to study and optimize KOH roughening of N-face AlN on the LEE as a function of roughened AlN pyramid size and KOH solution temperature.

Atomic-level passivation mechanism of ammonium salts enabling highly efficient perovskite solar cells.

The high conversion efficiency has made metal halide perovskite solar cells a real breakthrough in thin film photovoltaic technology in recent years. Here, we introduce a straightforward strategy to reduce the level of electronic defects present at the interface between the perovskite film and the hole transport layer by treating the perovskite surface with different types of ammonium salts, namely ethylammonium, imidazolium and guanidinium iodide. We use a triple cation perovskite formulation containing primarily formamidinium and small amounts of cesium and methylammonium.

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication.

We demonstrated a high-power (474 mW) blue superluminescent diode (SLD) on c-plane GaN-substrate for speckle-free solid-state lighting (SSL), and high-speed visible light communication (VLC) link. The device, emitting at 442 nm, showed a large spectral bandwidth of 6.5 nm at an optical power of 105 mW.

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications.

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, V, of 0V and 6.

Development of high performance green c-plane III-nitride light-emitting diodes.

The effect of employing an AlGaN cap layer in the active region of green c-plane light-emitting diodes (LEDs) was studied. Each quantum well (QW) and barrier in the active region consisted of an InGaN QW and a thin AlGaN cap layer grown at a relatively low temperature and a GaN barrier grown at a higher temperature. A series of experiments and simulations were carried out to explore the effects of varying the AlGaN cap layer thickness and GaN barrier growth temperature on LED efficiency and electrical performance.

Cavity length matching and optical resonances in a Raman laser with the multimode pump source.

We report on the observation of local reduction in generation threshold and enhancement in the output energy of a nanosecond Raman laser when the round-trip time of its cavity is matched with that of a longitudinally multimode pump laser or related to the latter as a ratio of small integers. We refer both observations to the synchronous pump effect originating from the periodicity in the small-scale intensity structure of the pump pulse.

Droop-free AlGaN/AlGaN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates.

Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires.

Efficient Triplet Exciton Fusion in Molecularly Doped Polymer Light-Emitting Diodes.

Solution-processed polymer organic light-emitting diodes (OLEDs) doped with triplet-triplet annihilation (TTA)-upconversion molecules, including 9,10-diphenylanthracene, perylene, rubrene and TIPS-pentacene, are reported. The fraction of triplet-generated electroluminescence approaches the theoretical limit. Record-high efficiencies in solution-processed OLEDs based on these materials are achieved.

High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth.

III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ~9 nm at 20 mW optical power.

Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications.

Group-III-nitride laser diode (LD)-based solid-state lighting device has been demonstrated to be droop-free compared to light-emitting diodes (LEDs), and highly energy-efficient compared to that of the traditional incandescent and fluorescent white light systems. The YAG:Ce phosphor used in LD-based solid-state lighting, however, is associated with rapid degradation issue. An alternate phosphor/LD architecture, which is capable of sustaining high temperature, high power density, while still intensity- and bandwidth-tunable for high color-quality remained unexplored.

Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the "green gap" has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm.

High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications.

A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021¯) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW.

Depot injectable biodegradable nanoparticles loaded with recombinant human bone morphogenetic protein-2: preparation, characterization, and in vivo evaluation.

Objective: The aim of this study is to utilize the biocompatibility characteristics of biodegradable polymers, viz, poly lactide-co-glycolide (PLGA) and polycaprolactone (PCL), to prepare sustained-release injectable nanoparticles (NPs) of bone morphogenetic protein-2 (BMP-2) for the repair of alveolar bone defects in rabbits. The influence of formulation parameters on the functional characteristics of the prepared NPs was studied to develop a new noninvasive injectable recombinant human BMP-2 (rhBMP-2) containing grafting material for the repair of alveolar bone clefts.

Materials And Methods: BMP-2 NPs were prepared using a water-in-oil-in-water double-emulsion solvent evaporation/extraction method.

Deficient cytokine control modulates temporomandibular joint pain in rheumatoid arthritis.

The aim was to investigate how endogenous cytokine control of tumor necrosis factor (TNF) influences temporomandibular joint (TMJ) pain in relation to the role of anti-citrullinated peptide antibodies (ACPA) in patients with rheumatoid arthritis (RA). Twenty-six consecutive patients with TMJ RA were included. Temporomandibular joint pain intensity was assessed at rest, on maximum mouth opening, on chewing, and on palpation.

Improved Open- Circuit Voltage in ZnO-PbSe Quantum Dot Solar Cells by Understanding and Reducing Losses Arising from the ZnO Conduction Band Tail.

Colloidal quantum dot solar cells (CQDSCs) are attracting growing attention owing to significant improvements in efficiency. However, even the best depleted-heterojunction CQDSCs currently display open-circuit voltages (s) at least 0.5 V below the voltage corresponding to the bandgap.

Management of exorbitism using midface distraction osteogenesis.

Introduction: Management of patients with syndromal craniosynostosis is probably one of the greatest challenges. They usually present with variable deformities yet share common characteristics. Patients with Crouzon and Aperts syndrome present with exorbitism and midface hypoplasia.

Management of patients with condylar hyperplasia: A diverse experience with 18 patients.

Purpose: The purpose was to report the clinical experience with patients diagnosed with Condylar Hyperplasia (CH).

Materials And Methods: Eighteen patients with CH underwent condylar growth assessment using clinical and radiographic examinations. Seven patients with suspected active condyles underwent single photo emission computed tomography (SPECT) examination.

Management of palatal vascular malformation using absolute ethanol sclerotherapy.

Arteriovenous malformation is treated by variety of techniques over the years. Sclerotherapy is considered an effective and conservative technique for the treatment of benign vascular lesions and replaced the traditional role of surgical therapy, especially for the venous lesions that are surgically difficult or at inaccessible areas. Absolute ethanol was adopted as a new sclerosant agent for this complex form of venous defects to improve overall treatment results with acceptable morbidity and recurrence rates.

Conversion process of ZnO nano-/micro-rods into nano-/micro-tubes and cathodoluminescence characterization.

A simple two-steps method has been successfully developed to synthesize ZnO nanotubes. The alkaline etching process was investigated in detail using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The formation of ZnO nanotube structures was due to the preferential dissolution of the defect-rich top (polar) faces.