Schottky barrier thin film transistors using solution-processed n-ZnO.

Solution-processed ZnO thin films are attractive as active materials in thin film transistors (TFTs) for low-cost electronic device applications. However, the lack of true enhancement mode operation, low mobility, and unreliability in transistor characteristics due to the high density of traps and other defects present challenges in using such TFTs in circuits. We demonstrate in this report that the electrical characteristics of such TFTs can be improved by source injection barriers.