Improvement of Schottky Contacts of Gallium Oxide (GaO) Nanowires for UV Applications.

Interest in the synthesis and fabrication of gallium oxide (GaO) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high power/temperature conditions. Due to their unique properties, i.e.