The short-wave infrared range is highly significant for spectroscopic sensing and upcoming optical communication applications. Integrating active and passive photonic components is essential to achieve compact optical solutions. In this paper, we show, for the first time to our knowledge, a wavelength-selective detection system based on the heterogeneous integration of two grating-coupled InGaAs photodetectors operating at the 2µm wave band, with a wavelength selectivity provided by a dual-channel Mach-Zehnder interferometer fabricated using a silicon-on-insulator (SOI) wafer.
View Article and Find Full Text PDFUnlabelled: We investigate different architectures for parabolic-graded InGaAs metamorphic buffers grown on GaAs using transmission electron microscopy techniques. The different architectures include InGaP and AlInGaAs/InGaP superlattices with different GaAs substrate misorientations and the inclusion of a strain balancing layer. Our results correlate: (i) the density and distribution of dislocations in the metamorphic buffer and (ii) the strain in the next layer preceding the metamorphic buffer, which varies for each type of architecture.
View Article and Find Full Text PDFUnlabelled: In this work, we report an extensive investigation via transmission electron microscopy (TEM) techniques of InGaAs/GaAs pyramidal quantum dots (PQDs), a unique site-controlled family of quantum emitters that have proven to be excellent sources of single and entangled photons. The most striking features of this system, originating from their peculiar fabrication process, include their inherently 3-dimensional nature and their interconnection to a series of nanostructures that are formed alongside them, such as quantum wells and quantum wires. We present structural and chemical data from cross-sectional and plan view samples of both single and stacked PQDs structures.
View Article and Find Full Text PDFWe report on single-mode C-band distributed feedback lasers fabricated through micro-transfer-printing of semiconductor optical amplifier coupons fabricated on a InP source wafer onto a silicon-on-insulator photonic circuit. The coupons are micro-transfer printed on quarter-wave shifted gratings defined in SiN deposited on the silicon waveguide. Alignment-tolerant adiabatic tapers are used to efficiently couple light from the hybrid III-V/Si waveguide to the Si waveguide circuit.
View Article and Find Full Text PDFSecond harmonic generation and sum frequency generation (SHG and SFG) provide effective means to realize coherent light at desired frequencies when lasing is not easily achievable. They have found applications from sensing to quantum optics and are of particular interest for integrated photonics at communication wavelengths. Decreasing the footprints of nonlinear components while maintaining their high up-conversion efficiency remains a challenge in the miniaturization of integrated photonics.
View Article and Find Full Text PDFWe demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.
View Article and Find Full Text PDFHybrid plasmonic lasers provide deep subwavelength optical confinement, strongly enhanced light-matter interaction and together with nanoscale footprint promise new applications in optical communication, biosensing, and photolithography. The subwavelength hybrid plasmonic lasers reported so far often use bottom-up grown nanowires, nanorods, and nanosquares, making it difficult to integrate these devices into industry-relevant high density plasmonic circuits. Here, we report the first experimental demonstration of AlGaInP based, red-emitting hybrid plasmonic lasers at room temperature using lithography based fabrication processes.
View Article and Find Full Text PDFWe present the results of a study of nitrogen incorporation in metalorganic-vapour-phase epitaxy-grown site-controlled quantum dots (QDs). We report for the first time on a significant incorporation (approximately 0.3%), producing a noteworthy red shift (at least 50 meV) in some of our samples.
View Article and Find Full Text PDFExciton-exciton interaction in dot/rod CdSe/CdS nanocrystals has proved to be very sensitive to the shape of nanocrystals, due to the unique band alignment between CdSe and CdS. Repulsive exciton-exciton interaction is demonstrated, which makes CdSe/CdS dot/rods promising gain media for solution-processable lasers, with projected pump threshold densities below 1 kW cm(-2) for continuous wave lasing.
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