Photocurrent generation in low-temperature-grown GaAs (LT-GaAs) has been significantly improved by growing a thin AlAs isolation layer between the LT-GaAs layer and semi-insulating (SI)-GaAs substrate. The AlAs layer allows greater arsenic incorporation into the LT-GaAs layer, prevents current diffusion into the GaAs substrate, and provides optical back-reflection that enhances below bandgap terahertz generation. Our plasmon-enhanced LT-GaAs/AlAs photoconductive antennas provide 4.
View Article and Find Full Text PDFA near-field edge-coupled photoconductive free-space linear tapered slot antenna has been constructed as a planar alternative to the standard photoconductive switch coupled to a silicon substrate lens. The temporal response along the optical axis is investigated to ensure the structure itself does not introduce pulse distortion which would fundamentally limit the usefulness of the structure. Experimental results show that a 1.
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