Link between Gas Phase Reaction Chemistry and the Electronic Conductivity of Atomic Layer Deposited Titanium Oxide Thin Films.

In situ monitoring of gas phase composition reveals the link between the changing gas phase chemistry during atomic layer deposition (ALD) half-cycle reactions and the electronic conductivity of ALD-TiO thin films. Dimethylamine ((CH)NH, DMA) is probed as the main product of both the TDMAT and water vapor half-reactions during the TDMAT/HO ALD process. In-plane electronic transport characterization of the ALD grown films demonstrates that the presence of DMA, a reducing agent, in the ALD chamber throughout each half-cycle is correlated with both an increase in the films' electronic conductivity, and observation of titanium in the 3+ oxidation state by ex situ X-ray photoelectron spectroscopy analysis of the films.

Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions.

In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization and optimization of the influence of the in situ doping supplied during the nanowire epitaxial growth on the sequential transistor gate stack quality. Results show that the intrinsic nanowire channels have a significant reduction in Dit as compared to planar references.