60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes.

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60-700 K, currently the widest range reported. The structure's layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used.