Radiolytic degradation of selective actinide extractants from the bis-1,2,4-triazine family in cyclohexanone solutions.

Early stages of radiolysis of solutions with 2,6-bis(5,5,8,8-tetramethyl-5,6,7,8-tetrahydro-benzo-[1,2,4]triazin-3-yl)pyridine (CyMe4-BTP) and 6,6'-bis(5,5,8,8-tetramethyl-5,6,7,8-tetrahydro-benzo-[1,2,4-]triazin-3-yl)-[2,2']bipyridine (CyMe4-BTBP) ligands in cyclohexanone, proposed as a solvent for selective actinide extraction, were studied by means of the pulse radiolysis technique with spectrophotometric detection. Transient UV-vis spectra of excited triplet states of ligands, formed by energy transfer from cyclohexanone excited triplet states to ligands, were recorded for the first time. The influence of typical extraction conditions (the presence of diluted acid and O from air) on the mechanisms of reactions in the system studied was assessed.

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors.

This study explores the suitability of (Cd,Mn)Te and (Cd,Mn)(Te,Se) as room-temperature X-ray and gamma-ray detector materials, grown using the Bridgman method. The investigation compares their crystal structure, mechanical and optical properties, and radiation detection capabilities. Both crystals can yield large-area single crystal samples measuring approximately 30 × 30 mm.

Electrical and Structural Properties of Semi-Polar-ZnO/-AlO and Polar-ZnO/-AlO Films: A Comparative Study.

In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on -(100) and -(001) oriented AlO substrate are reported. The films were grown in the same growth conditions and parameters at six different growth temperatures (T) ranging from 100 °C to 300 °C. All as-grown and annealed films were found to be polycrystalline, highly (001) oriented for the -AlO and highly (101) oriented for the -AlO substrate.

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters.

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (T) of 100-300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (-AlO or Si (100)) and a high sensitivity to T, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect.