Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications.

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption.

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors.

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS) integration. This paper reports for the first time, a multianalyte sensing platform that incorporates high performance, high yield, high robustness, three-dimensional-extended-metal-gate ISFETs (3D-EMG-ISFETs) realized by the postprocessing of a conventional 0.18 μm CMOS technology node.

Van der Waals MoS/VO heterostructure junction with tunable rectifier behavior and efficient photoresponse.

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus.

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines.

In this work, tunable MEMS capacitors are realized using a vertically grown carbon nanotube array. The vertical CNT array forms an effective CNT membrane, which can be electrostatically actuated like the conventional metal plates used in MEMS capacitors. The CNT membrane is grown on titanium nitride metal lines, with a Al/Fe bi-layer as buffer layer and catalyst material respectively, using chemical vapor deposition process.