Al Coordination and Ga Interstitial Stability in a β-(AlGa)O Thin Film.

Alloying AlO with GaO to form β-(AlGa)O opens the door to a large number of new possibilities for the fabrication of devices with tunable properties in many high-performance applications such as optoelectronics, sensing systems, and high-power electronics. Often, the properties of these devices are impacted by defects induced during the growth process. In this work, we uncover the crystal structure of a β-(AlGa)O/β-GaO interface grown by molecular beam epitaxy.