Interaction of acoustic waves with spin waves using a GHz operating GaN/Si SAW device with a Ni/NiFeSi layer between its IDTs.

A two port surface acoustic wave (SAW) device was developed to be used for the control and excitation via spin waves (SW). The structure was manufactured using advanced nanolithography techniques, on GaN/Si, enabling fundamental Rayleigh interdigitated transducer (IDT) resonances in GHz frequency range. The ferromagnetic resonance of the magnetostrictive Ni/NiFeSi layer placed between the IDTs of the SAW device can be tuned to the SAW resonance frequency by magnetic fields.

Different morphologies of super-balls obtained to form photonic crystals of cholesteryl benzoate liquid crystals.

The current study highlights the synthesis and characterization of some nanocomposite materials formed by polymer particles and liquid crystals. The liquid crystals used were cholesteryl benzoate (CLB), and the particles were synthesized by emulsion polymerization in the absence of the emulsifier. Through SEM and DLS analysis, the synthesis of particles of the same size was emphasized, and the amount of CLB showed no influence on these parameters.

Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy.

We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 /, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 .

Synthesis and characterization of polyurethane flexible foams provided from PET derivatives, fly ash, and glass wastes.

The aim of this study involved the synthesis and characterization of polyurethane (PUR) foams obtained from poly(ethylene terephthalate) (PET) depolymerization products and two types of filling agents, namely fly ash and glass waste. The depolymerized PET-based products were obtained by zinc acetate-catalyzed glycolysis process in diethylene glycol (DEG) as a co-reactant. The resulting glycolysis products were contacted with methylene diphenyl diisocyanate, castor oil, and reinforcing agents.

Subthreshold slope below 60 mV/decade in graphene transistors induced by channel geometry at the wafer-scale.

In this paper, we demonstrate experimentally that field-effect transistors with nanoconstricted graphene monolayer channels have a subthreshold swing (SS) below 60 mV/dec, which is slightly dependent on temperature. Two shapes of nanoconstricted graphene monolayers are considered: (i) a bow-tie shape, representative for a symmetric channel, and (ii) a trapezoidal shape, which illustrates an asymmetric channel. While both types of nonuniform channels are opening a bandgap in graphene, thus showing an on/off ratio of 10, the SS in the graphene bow-tie channel is below 60 mV/dec in the temperature range 25 °C-44 °C.

Synthesis and Mechanical Performances of Polyurethane Bio-Based Adhesives Resulted from the Depolymerization of Lignocellulose Biomass.

The purpose of this study is to valorize biomass waste into products with added value for indoor applications. Thus, broadleaf sawdust was chemically processed by the solvolysis reaction in acid catalysis in the presence of diethylene glycol at 160 °C for 4 h. After filtration and removal of the unreacted biomass, the glycolysis product was used in 6 different polyurethane adhesive formulations for wood bonding.

Tuning the infrared resonance of thermal emission from metasurfaces working in near-infrared.

We simulated numerically and demonstrated experimentally that the thermal emittance of a metasurface consisting of an array of rectangular metallic meta-atoms patterned on a layered periodic dielectric structure grown on top of a metallic layer can be tuned by changing several parameters. The resonance frequency, designed to be in the near-infrared spectral region, can be tuned by modifying the number of dielectric periods, and the polarization and incidence angle of the incoming radiation. In addition, the absorbance/emittance value at the resonant wavelength can be tuned by modifying the orientation of meta-atoms with respect to the illumination direction.

Surface Modification Using MAPLE Technique for Improving the Mechanical Performance of Adhesive Joints.

The adhesive bonds that ensure the appropriate mechanical properties for metal joining imply the surface chemical and wetting modification characteristics of the substrates. In this work, matrix-assisted pulsed laser evaporation (MAPLE) was used for the surface modification of Al via the deposition of two chemical compounds, polyvinyl alcohol (PVA) and triethanolamine (TEA), from frozen aqueous solutions. The deposition of the TEA and PVA layers was evidenced by FT-IR, SEM, and AFM analysis.

Harvesting microwave energy using pyroelectricity of nanostructured graphene/zirconium-doped hafnium oxide ferroelectric heterostructures.

In this work, we present the design, atomistic/circuit/electromagnetic simulations, and the experimental results for graphene monolayer/zirconium-doped hafnium oxide (HfZrO) ultra-thin ferroelectric-based field effect transistors fabricated at the wafer scale, regarding the pyroelectricity generation directly from microwave signals, at room temperature and below it, namely at 218 K and at 100 K. The transistors work like energy harvesters, i.e.

Nanomaterials and Devices for Harvesting Ambient Electromagnetic Waves.

This manuscript presents an overview of the implications of nanomaterials in harvesting ambient electromagnetic waves. We show that the most advanced electromagnetic harvesting devices are based on oxides with a thickness of few nanometers, carbon nanotubes, graphene, and molybdenum disulfide thanks to their unique physical properties. These tiny objects can produce in the years to come a revolution in the harvesting of energy originating from the Sun, heat, or the Earth itself.

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability.

As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning. Here we demonstrate the use of UV-Nanoimprint Lithography and Deep Reactive Ion Etching (Bosch and Cryogenic) towards this goal. Robust processes are described for the fabrication of silicon rectangular pillars of high pattern fidelity.

Ultralow voltage (1V) electrical switching of SnS thin films driven by a vertical electric field.

In this paper, we show in a series of experiments on 10 nm thick SnS thin film-based back-gate transistors that in the absence of the gate voltage, the drain current versus drain voltage (-) dependence is characterized by a weak drain current and by an ambipolar transport mechanism. When we apply a gate voltage as low as 1V, the current increases by several orders of magnitude and the-dependence changes drastically, with the SnS behaving as a-type semiconductor. This happens because the current flows from the source (S) to the drain (D) electrode through a discontinuous superficial region of the SnS film when no gate voltage is applied.

Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.

In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 10-10depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade.

Epoxy Coatings Containing Modified Graphene for Electromagnetic Shielding.

This study presents the functionalization and characterization of graphene and electromagnetic interference (EMI) attenuation capacity in epoxy-nanocomposites. The modification of graphene involved both small molecules and polymers for compatibilization with epoxy resin components to provide EMI shielding. The TGA and RAMAN analyses confirmed the synthesis of graphene with a different layer thickness of the graphene sheets.

The microwave properties of tin sulfide thin films prepared by RF magnetron sputtering techniques.

In this paper we present the microwave properties of tin sulfide (SnS) thin films with the thickness of just 10 nm, grown by RF magnetron sputtering techniques on a 4 inch silicon dioxide/high-resistivity silicon wafer. In this respect, interdigitated capacitors in coplanar waveguide technology were fabricated directly on the SnS film to be used as both phase shifters and detectors, depending on the ferroelectric or semiconductor behaviour of the SnS material. The ferroelectricity of the semiconducting thin layer manifests itself in a strong dependence of the electrical permittivity on the applied DC bias voltage, which induces a phase shift of 30 degrees mmat 1 GHz and of 8 degrees mmat 10 GHz, whereas the transmission losses are less than 2 dB in the frequency range 2-20 GHz.

Influence of Random Plasmonic Metasurfaces on Fluorescence Enhancement.

One of the strategies employed to increase the sensitivity of the fluorescence-based biosensors is to deposit chromophores on plasmonic metasurfaces which are periodic arrays of resonating nano-antennas that allow the control of the electromagnetic field leading to fluorescence enhancement. While artificially engineered metasurfaces realized by micro/nano-fabrication techniques lead to a precise tailoring of the excitation field and resonant cavity properties, the technological overhead, small areas, and high manufacturing cost renders them unsuitable for mass production. A method to circumvent these challenges is to use random distribution of metallic nanoparticles sustaining plasmonic resonances, which present the properties required to significantly enhance the fluorescence.

Graphene/Ferroelectric (Ge-Doped HfO) Adaptable Transistors Acting as Reconfigurable Logic Gates.

We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO/5 nm Ge-HfO intermediate layer/8 nm tunnel HfO/-Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the -Si substrate is acting as a back gate.

Bisphenol A Adsorption on Silica Particles Modified with Beta-Cyclodextrins.

This study presents the synthesis of silica particles bearing two beta-cyclodextrin (BCD) (beta-cyclodextrin-BCD-OH and diamino butane monosubstituted beta-cyclodextrin-BCD-NH). The successful synthesis of the BCD-modified silica was confirmed by FT-IR and TGA. Using contact angle measurements, BET analysis and SEM characterization, a possible formation mechanism for the generation of silica particles bearing BCD derivatives on their surface was highlighted.

Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography.

This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic deep reactive-ion etching techniques.

Magnetic silica particles functionalized with guanidine derivatives for microwave-assisted transesterification of waste oil.

This study aimed to develop a facile synthesis procedure for heterogeneous catalysts based on organic guanidine derivatives superbases chemically grafted on silica-coated FeO magnetic nanoparticles. Thus, the three organosilanes that were obtained by reacting the selected carbodiimides (N,N'-dicyclohexylcarbodiimide (DCC), N,N'-diisopropylcarbodiimide (DIC), respectively 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide (EDC) with 3-aminopropyltriethoxysilane (APTES) were used in a one-pot synthesis stage for the generation of a catalytic active protective shell through the simultaneous hydrolysis/condensation reaction with tetraethyl orthosilicate (TEOS). The catalysts were characterized by FTIR, TGA, SEM, BET and XRD analysis confirming the successful covalent attachment of the organic derivatives in the silica shell.

Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching.

The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions, often require fabrication techniques with high aspect ratios (HARs). Bosch and Cryogenic methods are the best etching candidates of industrial relevance towards the fabrication of these nanostructures.

The Behavior of Gold Metallized AlN/Si- and AlN/Glass-Based SAW Structures as Temperature Sensors.

Thin AlN piezoelectric layers have been deposited on high resistivity Si and glass substrates by reactive RF magnetron sputtering, in order to manufacture one-port gigahertz operating surface acoustic wave (SAW)-type resonators to be used as temperature sensors. The growth morphology surface topography, crystallographic structure, and crystalline quality of the AlN layers have been analyzed. Advanced nanolithographic techniques have been used to manufacture structures having interdigitated transducers with fingers and finger interdigit spacing width in the range of 250-170 nm.

Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors.

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

Graphene bandgap induced by ferroelectric HfO doped with Zr (HfZrO).

Motivated by the need to open a bandgap in graphene, we show experimentally that the CMOS-compatible ferroelectric HfZrO substrate induces a bandgap of 0.18 eV in graphene monolayer, which allows top-gate graphene/HfZrO/SiO/Si field-effect transistors to have high on/off current ratio, of about 10, at small drain voltages, of 0.5 V, and for gate voltage spans of only 3.