Strain-Mediated Giant Magnetoelectric Coupling in a Crystalline Multiferroic Heterostructure.

Multiferroic heterostructures based on the strain-mediated mechanism present ultralow heat dissipation and large magnetoelectric coupling coefficient, two conditions that require endless improvement for the design of fast nonvolatile random access memories with reduced power consumption. This work shows that a structure consisting of a [Pb(MgNb)O]-[PbTiO] (001) substrate on which a crystalline FeGa(001)/MgO(001) bilayer is deposited exhibits a giant magnetoelectric coupling coefficient of order 15 × 10 s m at room temperature. That result is a 2-fold increment over the previous highest value.