Salvage Total Hip Replacement for Failed Proximal Femoral Fracture Fixation.

Introduction: Salvage arthroplasty for failed proximal femoral fracture fixation is a complex procedure. This involves the removal of the primary failed or broken implant followed by a hip joint replacement procedure. The complications and technical difficulties associated with these surgeries are often difficult to anticipate.

Extending the spectrum of fully integrated photonics to submicrometre wavelengths.

Integrated photonics has profoundly affected a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the last decade, the progression from pure III-V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics, by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry.

High resolution, high channel count mid-infrared arrayed waveguide gratings in silicon.

Arrayed waveguide gratings (AWGs) working in the 4.7 µm wavelength range are reported on silicon-on-insulator waveguides with 1500 nm thick silicon and 2 µm thick buried oxide layers. For eight channel devices, three different channel spacings (200 GHz, 100 GHz, and 50 GHz) with cross talk levels of -32.

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.

Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers.

2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm from 2.

III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors.

2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (-30 to -25 dB) AWGs are realized.

Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared.

Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase shift. The required power is brought down to 80 mW by complete undercut using focused ion beam.