Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride.

We investigate the feasibility of the epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time the molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures.