In the developing field of nanotechnology, ZnO (zinc oxide) based semiconductor samples have emerged as the foremost choice due to their immense potential for advancing the development of cutting-edge nanodevices. Due to its excellent chemical stability, low cost, and non-toxicity to biological systems, it is also utilized in various investigations. In this study, the successive ionic layer adsorption and reaction (SILAR) method was used to generate FTO (fluorine-doped tin oxide)/ZnO, and tin (Sn)-copper (Cu)-doped ZnO thin films at varying concentrations on FTO substrates.
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