Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell.

Maintaining power consumption has become a critical hurdle in the manufacturing process as CMOS technologies continue to be downscaled. The longevity of portable gadgets is reduced as power usage increases. As a result, less-cost, high-density, less-power, and better-performance memory devices are in great demand in the electronics industry for a wide range of applications, including Internet of Things (IoT) and electronic devices like laptops and smartphones.