Multi-gate neuron-like transistors based on ensembles of aligned nanowires on flexible substrates.

The intriguing way the receptors in biological skin encode the tactile data has inspired the development of electronic skins (e-skin) with brain-inspired or neuromorphic computing. Starting with local (near sensor) data processing, there is an inherent mechanism in play that helps to scale down the data. This is particularly attractive when one considers the huge data produced by large number of sensors expected in a large area e-skin such as the whole-body skin of a robot.

Site-Selective Nanowire Synthesis and Fabrication of Printed Memristor Arrays with Ultralow Switching Voltages on Flexible Substrate.

Large area electronics (LAE) with the capability to sense and retain information are crucial for advances in applications such as wearables, digital healthcare, and robotics. The big data generated by these sensor-laden systems need to be scaled down or processed locally. In this regard, brain-inspired computing and in-memory computing have attracted considerable interest.

Out-of-Plane Electronics on Flexible Substrates Using Inorganic Nanowires Grown on High-Aspect-Ratio Printed Gold Micropillars.

Out-of-plane or 3D electronics on flexible substrates are an interesting direction that can enable novel solutions such as efficient bioelectricity generation and artificial retina. However, the development of devices with such architectures is limited by the lack of suitable fabrication techniques. Additive manufacturing (AM) can but often fail to provide high-resolution, sub-micrometer 3D architectures.

Printed n- and p-Channel Transistors using Silicon Nanoribbons Enduring Electrical, Thermal, and Mechanical Stress.

Printing technologies are changing the face of electronics with features such as resource-efficiency, low-cost, and novel form factors. While significant advances have been made in terms of organic electronics, the high-performance and stable transistors by printing, and their large-scale integration leading to fast integrated circuits remains a major challenge. This is because of the difficulties to print high-mobility semiconducting materials and the lack of high-resolution printing techniques.

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures.

The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.

Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability.

The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor-liquid-solid approach using r-plane (01-12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively.

Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires.

The production of large quantities of single crystalline semiconducting ZnO nanowires (NWs) at low cost can offer practical solutions to realizing several novel electronic/optoelectronic and sensor applications on an industrial scale. The present work demonstrates high-density single crystalline NWs synthesized by a multiple cycle hydrothermal process at ∼100 °C. The high carrier concentration in such ZnO NWs is greatly suppressed by a simple low cost thermal annealing step in ambient air at ∼450 °C.

Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst.

A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures. The growths of the various ZnO nanostructures have been carried out on SiC substrates in a horizontal furnace, using Au thin film as catalyst.