Publications by authors named "Abhishek Misra"

Interlayer excitons (IXs) in van der Waals heterostructures with static out of plane dipole moment and long lifetime show promise in the development of exciton based optoelectronic devices and the exploration of many body physics. However, these IXs are not always observed, as the emission is very sensitive to lattice mismatch and twist angle between the constituent materials. Moreover, their emission intensity is very weak compared to that of corresponding intralayer excitons at room temperature.

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Memristors-based integrated circuits for emerging bio-inspired computing paradigms require an integrated approach utilizing both volatile and nonvolatile memristive devices. Here, an innovative architecture comprising of 1D CVD-grown core-shell heterostructures (CSHSs) of MoO-MoS is employed as memristors manifesting both volatile switching (with high selectivity of 10 and steep slope of 0.6 mV decade) and nonvolatile switching phenomena (with I/I ≈10 and switching speed of 60 ns).

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The solid-state reaction method was utilised to create a down-conversion phosphor in an air environment in CaYO:Eu nanocrystalline material. The calcination temperature was set at 1000 °C, and the sintering temperature was set at 1300 °C. Following annealing, confirmation of the crystallinity quality of the phosphor was accomplished by the use of X-ray diffraction analysis.

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This research paper reports the synthesis and luminescence study of an Eu activated SrYO phosphor prepared by a modified solid-state reaction method with varying concentrations of Eu ions (0.1-2.5 mol%).

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Here, the synthesis and luminescence analysis of the Tb -activated phosphor were reported. The CaY O phosphors were synthesized using a modified solid-state reaction method with a variable doping concentration of Tb ion (0.1-2.

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Article Synopsis
  • Researchers developed a method to synthesize rhombohedral (3)-phase MoS in sword-like shapes through controlled gas flow in a chemical vapor deposition (CVD) process.
  • The resulting material showed strong characteristics, including high circular dichroism and distinct Raman peaks, confirming its unique phase and potential applications.
  • With impressive electronic properties, such as high field effect mobility and nonlinear susceptibility, this material offers promising opportunities for quantum electronic devices focused on valley-based physics and nonlinear optics.
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To solve the nonconvex constrained optimization problems (COPs) over continuous search spaces by using a population-based optimization algorithm, balancing between the feasible and infeasible solutions in the population plays an important role over different stages of the optimization process. To keep this balance, we propose a constraint handling technique, called the υ -level penalty function, which works by transforming a COP into an unconstrained one. Also, to improve the ability of the algorithm in handling several complex constraints, especially nonlinear inequality and equality constraints, we suggest a Broyden-based mutation that finds a feasible solution to replace an infeasible solution.

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The original version of this Article contained an error in the spelling of the author Matthew Holwill, which was incorrectly given as Mathew Holwill. This has now been corrected in both the PDF and HTML versions of the Article.

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Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors.

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Work function (WF) tuning of the contact electrodes is a key requirement in several device technologies, including organic photovoltaics (OPVs), organic light-emitting diodes (OLEDs), and complementary metal oxide semiconductor (CMOS) transistors. Here, we demonstrate that the WF of the gate electrode in an MOS structure can be modulated from 4.35 eV (n-type metal) to 5.

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We nominate the nickel filled multiwalled carbon nanotubes (MWNTs) as potential candidates to cope with challenges in persistent scaling for future interconnect technology. The insights into electrical transport through nickel filled carbon nanotubes provide an effective solution for major performance and reliability issues such as the increasing resistivity of metals at reduced scales, electromigration at high current densities and the problem of diffusion and corrosion faced by the existing copper interconnect technology. Furthermore, the nickel filled MWNTs outperform their hollow counterparts, the unfilled MWNTs, carrying at least one order higher current density, with increased time to failure.

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We demonstrate here the effect of electron beam induced deposited platinum on the electrical transport through multilayer graphene sheets. Platinum metal is deposited at different positions on the graphene multilayers, i.e.

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We report the healing of electrically broken multiwalled carbon nanotubes (MWNTs) using very low energy electrons (3-10 keV) in scanning electron microscopy (SEM). Current-induced breakdown caused by Joule heating has been achieved by applying suitably high voltages. The broken tubes were examined and exposed to electrons of 3-10 keV in situ in SEM with careful maneuvering of the electron beam at the broken site, which results in the mechanical joining of the tube.

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