Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.

Zincblende GaN has the potential to improve the efficiency of green- and amber-emitting nitride light emitting diodes due to the absence of internal polarisation fields. However, high densities of stacking faults are found in current zincblende GaN structures. This study presents a cathodoluminescence spectroscopy investigation into the low-temperature optical behaviour of a zincblende GaN/InGaN single quantum well structure.

Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons.

In this article, porous GaN distributed Bragg reflectors (DBRs) were fabricated by epitaxy of undoped/doped multilayers followed by electrochemical etching. We present backscattered electron scanning electron microscopy (BSE-SEM) for sub-surface plan-view imaging, enabling efficient, non-destructive pore morphology characterization. In mesoporous GaN DBRs, BSE-SEM images the same branching pores and Voronoi-like domains as scanning transmission electron microscopy.

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors.

Surface-engineered nanostructured nonpolar (112̅0) gallium nitride (GaN)-based high-performance ultraviolet (UV) photodetectors (PDs) have been fabricated. The surface morphology of a nonpolar GaN film was modified from pyramidal shape to flat and trigonal nanorods displaying facets along different crystallographic planes. We report the ease of enhancing the photocurrent (5.

Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films.

We report formation of aligned nanostructures on epitaxially grown polar and nonpolar GaN films via wet chemical (hot HPO and KOH) etching. The morphological evolution exhibited stress relaxed faceted nanopyramids, flat/trigonal nanorods and porous structures with high hydrophilicity and reduced wettability. The nanostructured films divulged significant suppression of defects and displayed an enhanced intensity ratio of the near band edge emission to the defect band.