Damage-Free Atomic Layer Etch of WSe: A Platform for Fabricating Clean Two-Dimensional Devices.

The development of a controllable, selective, and repeatable etch process is crucial for controlling the layer thickness and patterning of two-dimensional (2D) materials. However, the atomically thin dimensions and high structural similarity of different 2D materials make it difficult to adapt conventional thin-film etch processes. In this work, we propose a selective, damage-free atomic layer etch (ALE) that enables layer-by-layer removal of monolayer WSe without altering the physical, optical, and electronic properties of the underlying layers.

Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene.

Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene.

Dynamical strong coupling and parametric amplification of mechanical modes of graphene drums.

Mechanical resonators are ubiquitous in modern information technology. With the possibility of coupling them to electromagnetic and plasmonic modes, they hold promise as the key building blocks in future quantum information technology. Graphene-based resonators are of interest for technological applications due to their high resonant frequencies, multiple mechanical modes and low mass.

Nanoscale Electromechanics To Measure Thermal Conductivity, Expansion, and Interfacial Losses.

We study the effect of localized Joule heating on the mechanical properties of doubly clamped nanowires under tensile stress. Local heating results in systematic variation of the resonant frequency; these frequency changes result from thermal stresses that depend on temperature dependent thermal conductivity and expansion coefficient. The change in sign of the linear expansion coefficient of InAs is reflected in the resonant response of the system near a bath temperature of 20 K.