Heteroepitaxial Growth of an Ultrathin β-GaO Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling.

β-Gallium oxide (GaO) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of the β-GaO ultrathin film on a sapphire substrate via mist chemical vapor deposition (CVD). This study used a simple solution-processed and nonvacuum mist CVD method to grow a heteroepitaxial β-GaO thin film at 700 °C using a Ga precursor and carrier gases such as argon and oxygen.

Temperature Dependence of Ultrathin Mixed-Phase GaO Films Grown on the α-AlO Substrate via Mist-CVD.

Alpha (α)- and beta (β)-phase gallium oxide (GaO), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap ranging from 4.4 to 5.3 eV.

First-Principles Studies for Electronic Structure and Optical Properties of Strontium Doped β-GaO.

The crystal structure, electron charge density, band structure, density of states, and optical properties of pure and strontium (Sr)-doped β-GaO were studied using the first-principles calculation based on the density functional theory (DFT) within the generalized-gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE). The reason for choosing strontium as a dopant is due to its p-type doping behavior, which is expected to boost the material's electrical and optical properties and maximize the devices' efficiency. The structural parameter for pure β-GaO crystal structure is in the monoclinic space group (C2/m), which shows good agreement with the previous studies from experimental work.

First-Principles Studies for Electronic Structure and Optical Properties of -Type Calcium Doped α-GaO.

Gallium oxide (GaO) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of -type GaO is a key problem that hinders its potential for realistic power applications. In this paper, pure α-GaO and Ca-doped α-GaO band structure, the density of states, charge density distribution, and optical properties were determined by a first-principles generalized gradient approximation plane-wave pseudopotential method based on density functional theory.

Synergetic Effects of Hybrid Carbon Nanostructured Counter Electrodes for Dye-Sensitized Solar Cells: A Review.

This article provides an overview of the structural and physicochemical properties of stable carbon-based nanomaterials and their applications as counter electrodes (CEs) in dye-sensitized solar cells (DSSCs). The research community has long sought to harvest highly efficient third-generation DSSCs by developing carbon-based CEs, which are among the most important components of DSSCs. Since the initial introduction of DSSCs, Pt-based electrodes have been commonly used as CEs owing to their high-electrocatalytic activities, thus, accelerating the redox couple at the electrode/electrolyte interface to complete the circuit.