In this work, we study multiple epitaxial layer structures incorporating a resonant tunneling diode photodetector utilizing the InGaAs/InP material system for operation at the near-infrared region of 1.55 and 1.31 micrometers.
View Article and Find Full Text PDFWe investigate the dynamic behaviour of resonant tunneling diode-photodetectors (RTD-PDs) in which the excitability can be activated by either electrical noise or optical signals. In both cases, we find the characteristics of the stochastic spiking behavior are not only dependent on the biasing positions but also controlled by the intensity of the input perturbations. Additionally, we explore the ability of RTD-PDs to perform optical signal transmission and neuromorphic spike generation simultaneously.
View Article and Find Full Text PDFWe report on the direct intensity modulation characteristics of a high-speed resonant tunneling diode-photodetector (RTD-PD) with an oscillation frequency of 79 GHz. This work demonstrates both electrical and optical modulation and shows that RTD-PD oscillators can be utilized as versatile optoelectronic/radio interfaces. This is the first demonstration of optical modulation of an RF carrier using integrated RTD-PD oscillators at microwave frequencies.
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