Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers.

For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state conditions. The stability of the device threshold voltage (V) condition is imperative from a circuit-design perspective and is the focus of this study, where stresses in both the ON and OFF states are explored. We see rapid positive threshold voltage increases under negative bias stress and subsequent recovery (i.