Publications by authors named "A Zrenner"

Superconducting nanowire single-photon detectors (SNSPDs) show near unity efficiency, low dark count rate, and short recovery time. Combining these characteristics with temporal control of SNSPDs broadens their applications as in active de-latching for higher dynamic range counting or temporal filtering for pump-probe spectroscopy or LiDAR. To that end, we demonstrate active gating of an SNSPD with a minimum off-to-on rise time of 2.

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Tailored nanoscale quantum light sources, matching the specific needs of use cases, are crucial building blocks for photonic quantum technologies. Several different approaches to realize solid-state quantum emitters with high performance have been pursued and different concepts for energy tuning have been established. However, the properties of the emitted photons are always defined by the individual quantum emitter and can therefore not be controlled with full flexibility.

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Electric-field-induced second harmonic generation (EFISH) as a third order nonlinear process is of high practical interest for the realization of functional nonlinear structures. EFISH in materials with vanishing χ and non-zero χ offers huge potential, e.g.

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Integrated χ devices are a widespread tool for the generation and manipulation of light fields, since they exhibit high efficiency, a small footprint and the ability to interface them with fibre networks. Surprisingly, some commonly used material substrates are not yet fully understood, in particular potassium titanyl phosphate (KTP). A thorough understanding of the fabrication process of waveguides in this material and analysis of their properties is crucial for the realization and the engineering of high efficiency devices for quantum applications.

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In this work we study the impact of ion implantation on the nonlinear optical properties in MgO:LiNbO via confocal second-harmonic microscopy. In detail, we spatially characterize the nonlinear susceptibility in carbon-ion implanted lithium niobate planar waveguides for different implantation energies and fluences, as well as the effect of annealing. In a further step, a computational simulation is used to calculate the implantation range of carbon-ions and the corresponding defect density distribution.

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