Sputtered SrNbO as a UV-Transparent Conducting Film.

Expanding the application space of transparent electrodes toward the ultraviolet range has been found challenging when utilizing the conventional approach to degenerately dope semiconductors with band gaps larger than ZnO or InO. Here, it is shown that the correlated metal SrNbO with < 1 is ideally suited as a UV-transparent electrode material, enabling UV light-emitting diodes for a wide range of applications from water disinfection to polymer curing. It is demonstrated that SrNbO thin films can be grown by radio frequency (RF) sputtering and that they remain in the perovskite phase despite a sizeable Sr deficiency.

Scaling growth rates for perovskite oxide virtual substrates on silicon.

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production.

Ultralow Dispersion Multicomponent Thin-Film Chalcogenide Glass for Broadband Gradient-Index Optics.

A novel photothermal process to spatially modulate the concentration of sub-wavelength, high-index nanocrystals in a multicomponent Ge-As-Pb-Se chalcogenide glass thin film resulting in an optically functional infrared grating is demonstrated. The process results in the formation of an optical nanocomposite possessing ultralow dispersion over unprecedented bandwidth. The spatially tailored index and dispersion modification enables creation of arbitrary refractive index gradients.

Quantitative mapping of phase coexistence in Mott-Peierls insulator during electronic and thermally driven phase transition.

Quantitative impedance mapping of the spatially inhomogeneous insulator-to-metal transition (IMT) in vanadium dioxide (VO2) is performed with a lateral resolution of 50 nm through near-field scanning microwave microscopy (SMM) at 16 GHz. SMM is used to measure spatially resolved electronic properties of the phase coexistence in an unstrained VO2 film during the electrically as well as thermally induced IMT. A quantitative impedance map of both the electrically driven filamentary conduction and the thermally induced bulk transition is established.

Large anisotropic normal-state magnetoresistance in clean MgB2 thin films.

We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1 microOmega cm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Delta(rho)/(rho)0=136%) observed for the field H perpendicular ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to H||ab.