Publications by authors named "A V Lysov"
Periodontal, Functional, and Esthetic Integration of Peri-Implant Soft Tissue: WHS Concept.
J Oral Implantol
February 2022
The long-term functional success of implant treatment depends on the stability of the crestal bone around the implant platform. The esthetic result is achieved by adequate quality and quantity of soft tissue in the peri-implant area. The soft tissue creates the buffer area that ensures the mechanical and biological protection of the underlying bone.
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- - The case involves an elderly patient with urogenital tuberculosis and peripheral inguinal lymph node tuberculosis, which had been developing for 10 years without medical intervention.
- - The patient sought help after noticing changes on his glans penis, leading to ineffective treatment before being referred to a specialized anti-tuberculosis institution.
- - Once diagnosed with extensive tuberculosis affecting multiple organs, including the kidneys and genitalia, the patient responded positively to antituberculosis drug treatment.
Article Synopsis
- The study focuses on the importance of understanding optical near-fields for nanophotonics and how traditional methods like scanning near-field optical microscopy (SNOM) can be slow and inaccurate.
- Researchers present a new technique that uses second-harmonic generation (SHG) to indirectly sense infrared near-fields in GaAs nanowires without scanning, achieving faster and more accurate imaging.
- The findings reveal periodic intensity patterns in GaAs nanowires, allowing for precise measurement of their radii using just optical microscopy, which bypasses the need for electron microscopy.
Axial GaAs nanowire p-n diodes, possibly one of the core elements of future nanowire solar cells and light emitters, were grown via the Au-assisted vapor-liquid-solid mode, contacted by electron beam lithography, and investigated using electron beam induced current measurements. The minority carrier diffusion lengths and dynamics of both, electrons and holes, were determined directly at the vicinity of the p-n junction. The generated photocurrent shows an exponential decay on both sides of the junction and the extracted diffusion lengths are about 1 order of magnitude lower compared to bulk material due to surface recombination.
View Article and Find Full Text PDFIn this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated.
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