[Lower gastrointestinal dysfunction in patients with Parkinson's disease].

Objective: To assess the lower gastrointestinal tract dysfunction in patients with Parkinson's disease (PD) and to reveal its relationships with motor and non-motor symptoms.

Material And Methods: One hundred and eighteen patients with PD of I-III Hoehn and Yahr (H&Y) stages were studied using UPDRSI-IV, Sch&En, PDQ-39, MMSE, BDI, STAI-S and STAI-T, PFS-16, NMSQ, GSRS, BSFS, AUA. Body mass index and saliva amount and lacrimation (Schirmer's test) were assessed.

Band Offsets of the MOCVD-Grown β-(AlGa)O/β-GaO (010) Heterojunction.

The band offsets for the β-(AlGa)O/β-GaO (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality β-(AlGa)O films were grown by metal-organic chemical vapor deposition for characterization. The indirect band gap of β-(AlGa)O was determined by optical transmission to be 4.

The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope.

Piezoresponse force microscopy is used to study the velocity of the polarization domain wall in ultrathin ferroelectric barium titanate (BTO) films grown on strontium titanate (STO) substrates by molecular beam epitaxy. The electric field due to the cone of the atomic force microscope tip is demonstrated as the dominant electric field for domain expansion in thin films at lateral distances greater than about one tip diameter away from the tip. The velocity of the domain wall under the applied electric field by the tip in BTO for thin films (less than 40 nm) followed an expanding process given by Merz's law.

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission.

In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height.

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.

Unlabelled: Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains (< 0.2%), which is widely used for the non-destructive Raman study of strain with nanometer-scale spatial resolution is not valid for the binary wurtzite-structure group-III nitrides GaN and AlN.