Rotation symmetry mismatch and interlayer hybridization in MoS-black phosphorus van der Waals heterostructures.

Interlayer coupling in 2D heterostructures can result in a reduction of the rotation symmetry and the generation of quantum phenomena. Although these effects have been demonstrated in transition metal dichalcogenides (TMDs) with mismatched interfaces, the role of band hybridization remains unclear. In addition, the creation of flat bands at the valence band maximum (VBM) of TMDs is still an open challenge.

Erratum: Robust Weak Topological Insulator in the Bismuth Halide Bi_{4}Br_{2}I_{2} [Phys. Rev. Lett. 133, 086602 (2024)].

This corrects the article DOI: 10.1103/PhysRevLett.133.

Robust Weak Topological Insulator in the Bismuth Halide Bi_{4}Br_{2}I_{2}.

We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van der Waals stackings of 2D topological insulator layers, and find a bismuth halide Bi_{4}Br_{2}I_{2} to be an ideal weak topological insulator (WTI) with the largest band gap (∼300  meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Furthermore, we reveal that the topological surface state of a WTI is not "weak" but rather robust against external perturbations against the initial theoretical prediction by performing potassium deposition experiments. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.

Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer.

Stacking monolayer semiconductors creates moiré patterns, leading to correlated and topological electronic phenomena, but measurements of the electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers of WS/WSe using submicrometer angle-resolved photoemission spectroscopy with electrostatic gating. We find that at all twist angles the conduction band edge is the -point valley of the WS, with a band gap of 1.