Self-powered stable high-performance UV-Vis-NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction.

The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 10was obtained from-measurements of the device in the dark.

The temperature induced current transport characteristics in the orthoferrite YbFeOthin film/p-type Si structure.

The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (-) characteristics of the Al/YbFeO/p-Si/Al hetero-junction. The orthoferrite YbFeOthin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system.

Frequency and temperature-dependent electric modulus spectroscopy of osmium-doped YbFeO structure.

Orthoferrites have occupied important place in the material science and condensed matter physics investigations due to their unique features such as electrical, magnetic and optical. The present investigation illuminates light on the electrical properties of osmium (Os) doped YbFeO (YbFO) rare-earth orthoferrite. The undoped YbFO and YbFe Os O (YbFOO) (x  =  0.

The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO and LaCrIrO perovskites.

We have prepared LaCrO (LCO) and 10% Ir doped LCO samples by the solid state reaction method and studied the electrical modulus and the other dielectric properties of the samples by means of the impedance spectroscopy in the -100 °C to 100 °C range, with steps of 20 °C. It has been clearly observed that the dielectric properties change due to Ir doping. The absolute dielectric constant value of Ir doped LCO has decreased and this reduction was attributed to decreasing Cr ions which may play a vital role in space charge polarization and charge hopping.