56 Gbps externally modulated widely tunable lasers with SOA boosters heterogeneously integrated on silicon.

We demonstrate externally modulated widely tunable lasers co-integrated with semiconductor optical amplifiers (SOAs) heterogeneously integrated on silicon. The widely tunable laser enables continuous single-mode operation over a tuning range of approximately 40 nm, with a side-mode suppression ratio (SMSR) of at least 50 dB and an average waveguide-coupled optical power of 5 mW. The integrated electro-absorption modulator (EAM) exhibits an extinction ratio (ER) of 16 dB when reversed biased at -2 V.

Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings.

We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%.

[Endocavitary His bundle fulguration in the treatment of resistant supraventricular arrhythmia].

Nine patients aged 47 to 74 years underwent endocavitary destruction of the bundle of His because of paroxysmal arrhythmias resistant to medical therapy. Four patients had paroxysmal atrial fibrillation, 2 had paroxysmal atrial flutter, 1 had reentrant atrial tachycardia, 1 had paroxysmal atrial tachycardia and 1 had an intranodal reentrant tachycardia. One patient had already undergone "surgical ablation" of the His bundle without success.