Publications by authors named "A S Sokolovskii"

We study theoretically the size distributions of nanoparticles (islands, droplets, nanowires) whose time evolution obeys the kinetic rate equations with size-dependent condensation and evaporation rates. Different effects are studied which contribute to the size distribution broadening, including kinetic fluctuations, evaporation, nucleation delay, and size-dependent growth rates. Under rather general assumptions, an analytic form of the size distribution is obtained in terms of the natural variable s which equals the number of monomers in the nanoparticle.

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The droplet contact angle and morphology of the growth interface (vertical, tapered or truncated facets) are known to affect the zincblende (ZB) or wurtzite (WZ) crystal phase of III-V nanowires (NWs) grown by the vapor-liquid-solid method. Here, we present a model which describes the dynamics of the morphological evolution in self-catalyzed III-V NWs in terms of the time-dependent (or length-dependent) contact angle or top nanowire radius under varying material fluxes. The model fits quite well the contact angle dynamics obtained by in situ growth monitoring of self-catalyzed GaAs NWs in a transmission electron microscope.

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Recent investigations of III-V semiconductor nanowires have revealed periodic zinc-blende twins, known as twinning superlattices, that are often induced by a high-impurity dopant concentration. In the present study, the relationship between the nanowire morphology, crystal structure, and impurity dopant concentration (Te and Be) of twinning superlattices has been studied in GaAs nanowires grown by molecular beam epitaxy using the self-assisted (with a Ga droplet) vapor-liquid-solid process. The contact angle between the Ga droplet and the nanowire top facet decreased linearly with the dopant concentration, whereas the period of the twinning superlattices increased with the doping concentration and was proportional to the nanowire radius.

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Article Synopsis
  • An analytical growth model explains how varying antimony fractional flux affects the morphology of catalyst-free InAs Sb semiconductor nanowires.
  • Increasing the Sb fractional flux leads to more radial growth and less axial growth, creating formations known as 'nano-disks'.
  • This phenomenon is attributed to the diffusion of indium adatoms along the surfaces of the nanowires.
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