A Machine Learning Approach to Predict Radiation Effects in Microelectronic Components.

This paper presents an innovative technique, Advanced Predictor of Electrical Parameters, based on machine learning methods to predict the degradation of electronic components under the effects of radiation. The term degradation refers to the way in which electrical parameters of the electronic components vary with the irradiation dose. This method consists of two sequential steps defined as 'recognition of degradation patterns in the database' and 'degradation prediction of new samples without any kind of irradiation'.

General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams.

A commercial pMOS transistor (MOSFET), 3N163 from Vishay (USA), has been characterized as a low-energy proton beam dosimeter. The top of the samples' housing has been removed to guarantee that protons reached the sensitive area, that is, the silicon die. Irradiations took place at the National Accelerator Centre (Seville, Spain).