Multifunctional hardware technologies for neuromorphic computing are essential for replicating the complexity of biological neural systems, thereby improving the performance of artificial synapses and neurons. Integrating ionic and spintronic technologies offers new degrees of freedom to modulate synaptic potentiation and depression, introducing novel magnetic functionalities alongside the established ionic analogue behavior. We demonstrate that magneto-ionic devices can perform as synaptic elements with dynamically tunable depression linearity controlled by an external magnetic field, a functionality reminiscent of neuromodulation in biological systems.
View Article and Find Full Text PDFNanotechnology
December 2024
We present a sequential growth scheme based on pulsed laser deposition, which yields dense arrays of ultrathin, match-shaped Au/CoNi nanopillars, vertically embedded in SrTiOthin films. Analysis of the magnetic properties of these nanocomposites reveals a pronounced out-of-plane anisotropy. We show that the latter not only results from the peculiar nanoarchitecture of the hybrid films but is further enhanced by strong magneto-structural coupling of the wires to the surrounding matrix.
View Article and Find Full Text PDFIn investigating the monoatomic layers of P, several stable two-dimensional (2D) allotropes have been theoretically predicted. Among them, single-layer blue phosphorus (BlueP) appears to deliver promising properties. After initial success, where the structure of BlueP triangular patches on Au(111) was conceived on the basis of scanning tunneling microscopy (STM) and density functional theory (DFT), the surface structure model was revisited multiple times with increasing accuracy and insight of theoretical calculations and experimental datasets.
View Article and Find Full Text PDFIn the quest for thinner and more efficient ferroelectric devices, HfZrO (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with thicknesses ranging from 10 to 52 nm, both within and out of the ferroelectric thickness range where ferroelectric properties are observed.
View Article and Find Full Text PDF