Hexagonal boron nitride (h-BN) bubbles are of significant interest to micro-scale hydrogen storage thanks to their ability to confine hydrogen gas molecules. Previous reports of h-BN bubble creation from grown h-BN films require electron beams under vacuum, making integrating with other experimental setups for hydrogen production impractical. Therefore, in this study, the formation of h-BN bubbles is demonstrated in a 20 nm h-BN film grown on a sapphire substrate with a 213 nm UV laser beam.
View Article and Find Full Text PDFThree-dimensional (3D) hetero-integration technology is poised to revolutionize the field of electronics by stacking functional layers vertically, thereby creating novel 3D circuity architectures with high integration density and unparalleled multifunctionality. However, the conventional 3D integration technique involves complex wafer processing and intricate interlayer wiring. Here we demonstrate monolithic 3D integration of two-dimensional, material-based artificial intelligence (AI)-processing hardware with ultimate integrability and multifunctionality.
View Article and Find Full Text PDFAluminium Gallium Nitride (AlGaN) quantum dots (QDs) with thin sub-µm AlGaN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface roughness was investigated by atomic force microscopy for different deposited thicknesses. It was shown that for thicker AlN layers (i.
View Article and Find Full Text PDFMicro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down, but minimization of the lateral dimensions of stacked µLEDs has been difficult.
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