Mapping of Vibrational Modes Revealing a Strong and Tunable Coupling in Two Juxtaposed 3R-WSe Nanodrums.

Two-dimensional (2D) material resonators have emerged as promising platforms for advanced nanomechanical applications due to their exceptional mechanical properties, tunability, and nonlinearities. We explored the strong mechanical mode coupling between two adjacent 3R-WSe nanodrums at room temperature. Combining a piezoelectric material, as noncentrosymmetric 3R-WSe, and vibration manipulation is the building block for phononic experiments with 2D materials.

Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe Probed by THz Spintronic Emission.

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC.

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits.

Emerging reconfigurable devices are fast gaining popularity in the search for next-generation computing hardware, while ferroelectric engineering of the doping state in semiconductor materials has the potential to offer alternatives to traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate the suitability of reconfigurable ferroelectric field-effect transistors (Re-FeFETs) for designing nonvolatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInPS) layer.

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe on GaP(111) Heterostructure.

The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that a rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe) on a gallium phosphide (GaP) substrate.

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric -InSe.

Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories due to their low energy consumption and high endurance. Among them, α-InSe has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to the depolarization field.