Distributed feedback broad area lasers with multiple epitaxially stacked active regions and tunnel junctions.

Distributed feedback (DFB) broad area (BA) lasers with multiple epitaxially stacked active regions and tunnel junctions designed for emission around 900 nm are investigated. DFB BA lasers with a cavity length of 1 mm and different stripe widths are compared in terms of their electro-optical performance and beam quality. The laser with a 200 µm stripe width achieved a high optical pulse power of 100 W in 10 ns long pulses at an injection current of 63 A, resulting in a brightness of 81 MW/cmsr.

783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power.

Wavelength stabilized distributed Bragg reflector (DBR) tapered diode lasers at 783 nm will be presented. The devices are based on GaAsP single quantum wells embedded in a large optical cavity leading to a vertical far field angle of about 29° (full width at half maximum). The 3-inch (7.

A 1.4 kW 780 nm pulsed diode laser, high duty cycle, passively side-cooled pump module.

A diode laser module emitting 1.4 kW optical in-pulse power near 780 nm optimized for high (≥ 10%) duty-cycle operation in a micro-channel free design is presented. With full collimation, a beam quality with a nearly symmetric M of 205 × 295 (vertical × horizontal direction) for a wide range of pulse widths is found.

Lateral resolution of nanoscaled images delivered by surface-analytical instruments: application of the BAM-L200 certified reference material and related ISO standards.

The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned epitaxially grown layer stack of AlxGa1-xAs and InxGa1-xAs on a GaAs substrate. The surface of BAM-L200 provides a flat pattern with stripe widths ranging down to 1 nm.