Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip: publisher's note.

This publisher's note contains corrections to Opt. Lett.44, 5788 (2019)OPLEDP0146-959210.

Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip.

We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss of 0.

Low-loss TeO-coated SiN waveguides for application in photonic integrated circuits.

We report on high-quality tellurium oxide waveguides integrated on a low-loss silicon nitride wafer-scale platform. The waveguides consist of silicon nitride strip features, which are fabricated using a standard foundry process and a tellurium oxide coating layer that is deposited in a single post-processing step. We show that by adjusting the SiN strip height and width and TeO layer thickness, a small mode area, small bend radius and high optical intensity overlap with the TeO can be obtained.

High-Q tellurium-oxide-coated silicon nitride microring resonators.

We report on tellurium-oxide (TeO)-coated silicon nitride microring resonators with internal quality factors up to 7.3×10, corresponding to 0.5 dB/cm waveguide loss, at wavelengths around 1550 nm.

TriPleX™ waveguide-based fluorescence biosensor for multichannel environmental contaminants detection.

In order to realize the multi-analyte assays for environmental contaminants, an optical biosensor utilizing laser-induced fluorescence-based detection via the binding of biomolecules to the surface of an integrated TriPleX™ waveguide chip on a glass substrate (fused silica, FS) is described. As far as we know, this is the first demonstration of using the TriPleX™ technology to fabricate the waveguide chip on a FS substrate. The sensor consists of 32 individually addressable sensor patches, which were formed on the chip surface by exploiting 3 Y-junction splitters, creating four equal rows of eight evanescently excited windows in parallel.