Spontaneous formation of monocrystalline nanostripes in the molecular beam epitaxy of antimony triselenide.

Self-assembled, highly anisotropic nanostructures are spontaneously formed in the molecular beam epitaxy of antimony triselenide on GaAs substrates. These one-dimensional (1D) nanostripes have all the orientations parallel to the substrate surface and preserve the epitaxial relationship with the substrate. The shape of the nanostripes is directly related to the highly anisotropic stibnite structure of antimony triselenide which consists of 1D ribbons held together by weak van der Waals forces.

The Effects of Selected Extraction Methods and Natural Deep Eutectic Solvents on the Recovery of Active Principles from var. (Rupr. & Maxim.) J. Wen: A Non-Targeted Metabolomics Approach.

The methods and solvents employed in routine extraction protocols essentially impact the composition of the resulting extracts, i.e., the relative abundances of individual biologically active metabolites and the quality and stability of the isolates.

Wurtzite . rock-salt MnSe epitaxy: electronic and altermagnetic properties.

Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from specific symmetry operation that connects the spin sublattices. In this report, we show with calculations that semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature.

Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation.

Van der Waals heterostructures (vdWHSs) enable the fabrication of complex electronic devices based on two-dimensional (2D) materials. Ideally, these vdWHSs should be fabricated in a scalable and repeatable way and only in the specific areas of the substrate to lower the number of technological operations inducing defects and impurities. Here, we present a method of selective fabrication of vdWHSs via chemical vapor deposition by electron-beam (EB) irradiation.

Carrier separation in type-II quantum dots inserted in (Zn,Mg)Te/ZnSe nanowires.

Quantum dots consisting of an axial ZnMgTe insertion inside a large-bandgap ZnMgTe nanowire core are fabricated in a molecular-beam epitaxy system by employing the vapor-liquid-solid growth mechanism. In addition, this structure is coated with a thin ZnSe radial shell that forms a type-II interface with the dot semiconductor. The resulting radial electron-hole separation is evidenced by several distinct effects that occur in the presence of the ZnSe shell, including the optical emission redshift of about 250 meV, a significant decrease in emission intensity, an increase in the excitonic lifetime by one order of magnitude, and an increase in the biexciton binding energy.