Ultranarrow Semiconductor WS Nanoribbon Field-Effect Transistors.

Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS) nanoribbons as small as sub-10 nm in width.

Moiré-engineered light-matter interactions in MoS/WSe heterobilayers at room temperature.

Moiré superlattices in van der Waals heterostructures represent a highly tunable quantum system, attracting substantial interest in both many-body physics and device applications. However, the influence of the moiré potential on light-matter interactions at room temperature has remained largely unexplored. In our study, we demonstrate that the moiré potential in MoS/WSe heterobilayers facilitates the localization of interlayer exciton (IX) at room temperature.

Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits.

Innovations in resistive switching devices constitute a core objective for the development of ultralow-power computing devices. Forming-free resistive switching is a type of resistive switching that eliminates the need for an initial high voltage for the formation of conductive filaments and offers promising opportunities to overcome the limitations of traditional resistive switching devices. Here, we demonstrate mixed charge state oxygen vacancy-engineered electroforming-free resistive switching in NiFeO (NFO) thin films, fabricated as asymmetric Ti/NFO/Pt heterostructures, for the first time.

Strong In-Plane Magnetization and Spin Polarization in (CoFe)GeTe/Graphene van der Waals Heterostructure Spin-Valve at Room Temperature.

Van der Waals (vdW) magnets are promising, because of their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, so far, most of the vdW magnet-based spintronic devices have been limited to cryogenic temperatures with magnetic anisotropies favoring out-of-plane or canted orientation of the magnetization. Here, we report beyond room-temperature lateral spin-valve devices with strong in-plane magnetization and spin polarization of the vdW ferromagnet (CoFe)GeTe (CFGT) in heterostructures with graphene.

A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe GeTe /Graphene Heterostructure.

The discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe GeTe in heterostructures with graphene is demonstrated.