Strain-Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives.

Strain engineering is a powerful strategy that can strongly influence and tune the intrinsic characteristics of materials by incorporating lattice deformations. Due to atomically thin thickness, 2D materials are excellent candidates for strain engineering as they possess inherent mechanical flexibility and stretchability, which allow them to withstand large strains. The application of strain affects the atomic arrangement in the lattice of 2D material, which modify the electronic band structure.

Military Injuries: Helocasting Accident.

Background: Accidental injuries sustained during helocasting remain unexamined.

Methods: Conditions prevalent during a helocasting exercise performed at a still water body and the resulting casualties were analyzed.

Results: Despatch from greater-than-ideal height (>7 m) and speed (>5 knots) causes a high-velocity impact of the body with water in a non-aerodynamic configuration, exposing maximal body area at penetration.

Evaluation of Different Techniques of Working Length Determination in Comparison with CBCT.

Aim: To estimate the working length of teeth using conventional tactile technique, radiovisiography technique, Apex locator, and confirmation of working length by cone beam computed tomography technique.

Materials And Methods: Forty patients with the age group between 20 and 50 years with irreversible pulpitis were included in this study. After taking a preoperative radiograph, the procedure was started.

Dynamic Adaptation in Extant Porins Facilitates Antibiotic Tolerance in Energetic .

Bacteria can tolerate antibiotics despite lacking the genetic components for resistance. The prevailing notion is that tolerance results from depleted cellular energy or cell dormancy. In contrast to this view, many cells in the tolerant population of Escherichia coli can exhibit motility - a phenomenon that requires cellular energy, specifically, the proton-motive force (PMF).

Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS Thin Film Transistors.

Strain engineering has been employed as a crucial technique to enhance the electrical properties of semiconductors, especially in Si transistor technologies. Recent theoretical investigations have suggested that strain engineering can also markedly enhance the carrier mobility of two-dimensional (2D) transition-metal dichalcogenides (TMDs). The conventional methods used in strain engineering for Si and other bulk semiconductors are difficult to adapt to ultrathin 2D TMDs.