Publications by authors named "A JUS"
Background: To help navigate the complex treatment landscape of ulcerative colitis (UC), we quantified the benefit-risk trade-offs that patients were willing to make when choosing treatment.
Methods: Patients completed an online discrete choice experiment. Eligible patients had a UC diagnosis for ≥6 months, were aged ≥18 years, and resided in France, Germany, Italy, Spain, or the UK.
Background: Understanding disease burden is imperative for improving inflammatory bowel disease (IBD) management. This real-world survey investigated residual disease burden and treatment satisfaction among European patients with moderate-to-severe ulcerative colitis (UC) and Crohn's disease (CD).
Methods: The Adelphi Real World IBD Disease Specific Programme was a multinational, cross-sectional survey with retrospective collection of patient- and physician-reported data on disease burden and management.
The nanohardness and Young's modulus of PbCdTe single crystals prepared by the self-selecting vapor growth (SSVG) method and thick, MBE-grown layers with a total Cd content of up to 7% metal atoms were studied using the nanoindentation technique; the nanohardness and Young's modulus were calculated by the Oliver and Pharr method. Significant hardening of SSVG crystals with increasing number of Cd atoms replacing Pb atoms in the formed solid solution was observed, and low anisotropy of the nanohardness and Young's modulus were found. The CdTe solubility limit in the solid solution grown using an MBE equal to 2.
View Article and Find Full Text PDFArticle Synopsis
- The molecular beam epitaxy (MBE) technique is highly effective for growing high-quality crystalline materials like GaAs, but it is very sensitive to changes, making it challenging to maintain optimal growth parameters after servicing.
- Routine servicing of the MBE system can disrupt established growth conditions, necessitating recalibration to achieve the desired layer quality.
- This work focuses on pre-optimizing growth parameters for homoepitaxial GaAs layers post-servicing, analyzing the impact of different reestablishment steps and comparing conditions from two growth campaigns that varied by the presence of an ion pump and temperature adjustments.
We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface quality. The minimal strain T2SL versus GaSb substrate can be achieved by a special shutters sequence during MBE growth that leads to the formation of both interfaces.
View Article and Find Full Text PDF