Revisiting Electronic Topological Transitions in the Silver-Palladium (AgPd) Solid Solution: An Experimental and Theoretical Investigation.

Multiple thick film samples of the AgcPd1-c solid solution were prepared using physical vapour deposition over a borosilicate glass substrate. This synthesis technique allows continuous variation in stoichiometry, while the distribution of silver or palladium atoms retains the arrangement into an on-average periodic lattice with smoothly varying unit cell parameters. The alloy concentration and geometry were measured over a set of sample points, respectively, via energy-dispersive X-ray spectroscopy and via X-ray diffraction.

Interfacial Resistive Switching of Niobium-Titanium Anodic Memristors with Self-Rectifying Capabilities.

A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional spread ranging between 22 and 64 at.

Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys.

The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf-Nb thin-film combinatorial system deposited by sputtering on Si substrates. The active layer was grown anodically on each Hf-Nb alloy from the library, whereas Pt electrodes were deposited as the top electrodes.

Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching.

The aim of this study was to develop memristors based on NbO grown by a simple and inexpensive electrochemical anodization process. It was confirmed that the electrolyte selection plays a crucial role in resistive switching due to electrolyte species incorporation in oxide, thus influencing the formation of conductive filaments. Anodic memristors grown in phosphate buffer showed improved electrical characteristics, while those formed in citrated buffer exhibited excellent memory capabilities.

Comparative Behavior of Viscose-Based Supercapacitor Electrodes Activated by KOH, HO, and CO.

Activated carbons derived from viscose fibers were prepared using potassium hydroxide, carbon dioxide, or water vapor as activation agents. The produced activated carbon fibers were analyzed via scanning electron microscopy and energy dispersive X-ray spectroscopy, and their porosity (specific surface area, total pore volume, and pore size distribution) was calculated employing physisorption experiments. Activated carbon fibers with a specific surface area of more than 2500 m g were obtained by each of the three methods.