Infrared optical properties of evaporated alumina films.

The dielectric function epsilon identical with epsilon(1) + iepsilon(2) has been determined for Al(2)O(3) films prepared by electron beam evaporation, in the 5-50-microm wavelength range. The data were extracted from spectrophotometric recordings of transmittance and reflectance by use of a novel technique. Supplementary measurements were made of the refractive index for visible and near-infrared wavelengths and of the dielectric constant at 1 MHz.

Determination of optical constants of absorbing materials using transmission and reflection of thin films on partially metallized substrates: analysis of the new (T,R(m)) technique.

A new accurate technique for determining the optical constants of thin absorbing films is presented. The configuration used includes a conventional spectrophotometer and a transparent substrate, half of which is covered with an opaque highly reflecting metal layer prior to the deposition of the film to be studied. The normal incidence transmission T of the thin film on the transparent substrate is then combined with a measurement of the near normal reflection R(m) of the same film on the metal covered part of the substrate.

Infrared optical properties of silicon monoxide films.

The dielectric function epsilon identical with epsilon(1) + iepsilon(2) of evaporated SiO films is reported for the wavelength region from 8 to 33 microm. The data are based on spectrophotometric measurements of reflectance and transmittance for films evaporated onto KRS-5 and crystalline Si and on reflectance measurements on films evaporated onto opaque Al layers. The consistency in the results for epsilon(1) and epsilon(2) is verified by the Kramers-Kronig analysis.