Plasma window performance and scaling for an accelerator-based neutron source.

A "plasma window" was developed for use with a SHINE accelerator-based neutron source. In this work, the design of the plasma window is presented along with results demonstrating successful operation in deuterium over a range of aperture diameters (5-12 mm), gas flow rates (3.5 to 12.

Molecular ion sources for low energy semiconductor ion implantation (invited).

Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively.

Eliminating unwanted electrons in EBIS devices.

In electron beam ion sources, step-wise ionization to high charge states is accomplished by magnetically confined electron beam. Electron space charge and high voltage electrodes confine the ions. The relativistic heavy ion collider (RHIC) ion source Debye length meets requirements for instabilities with free source of energy to grow.

Gas feeding molecular phosphorous ion source for semiconductor implanters.

Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus-red phosphorus. At vacuum heating temperatures ranging from 325 °C, red phosphorus evaporates solely as P4 molecules (P4/P2 ∼ 2 × 10(5), P4/P ∼ 10(21)).