Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN.

Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties.

Extremely small energy gap in the quasi-one-dimensional conducting chain compound SrNbO3.41.

Resistivity, optical, and angle-resolved photoemission experiments reveal unusual one-dimensional electronic properties of highly anisotropic SrNbO3.41. Along the conducting chain direction, we find an extremely small energy gap of only a few meV at the Fermi level.