Near-infrared germanium PIN-photodiodes with >1A/W responsivity.

Even though efficient near-infrared (NIR) detection is critical for numerous applications, state-of-the-art NIR detectors either suffer from limited capability of detecting incoming photons, i.e., have poor spectral responsivity, or are made of expensive group III-V non-CMOS compatible materials.

Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130.

At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite this, the performance of current UV sensors is surprisingly poor. Here, we break the theoretical one-photon-one-electron barrier and demonstrate a device with a certified external quantum efficiency above 130% in UV range without external amplification.

Quantum efficiency of black silicon photodiodes at VUV wavelengths.

Black silicon (b-Si) is an emerging material made by modifying silicon with nanostructures for improved photon detection. It has been demonstrated that when used in photodetectors b-Si significantly improves photon detection and extends spectral sensitivity from NIR to the visible wavelengths. However, no data have been reported in the Vacuum Ultraviolet (VUV) range, which is increasingly becoming important for many applications.